? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c (chip capability) 420 a i l(rms) external lead current limit 160 a i dm t c = 25 c, pulse width limited by t jm 1000 a i a t c = 25 c 100 a e as t c = 25 c5j p d t c = 25 c 1670 w dv/dt i s i dm , v dd v dss , t j 175c 20 v/ns t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 100 v v gs(th) v ds = v gs , i d = 8ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 150 c 5 ma r ds(on) v gs = 10v, i d = 60a, note 1 2.6 m n-channel enhancement mode avalanche rated fast intrinsic diode IXFK420N10T ixfx420n10t v dss = 100v i d25 = 420a r ds(on) 2.6m t rr 140ns ds100198(09/09) features z international standard packages z high current handling capability z fast intrinsic diode z avalanche rated z low r ds(on) advantages z easy to mount z space savings z high power density applications z synchronous recification z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications gigamos tm trench hiperfet tm power mosfet advance technical information g = gate d = drain s = source tab = drain plus247 (ixfx) to-264 (ixfk) s g d tab tab g s d
ixys reserves the right to change limits, test conditions, and dimensions. IXFK420N10T ixfx420n10t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 110 185 s c iss 47 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 4390 pf c rss 530 pf r gi gate input resistance 1.46 t d(on) 47 ns t r 155 ns t d(off) 115 ns t f 255 ns q g(on) 670 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 170 nc q gd 195 nc r thjc 0.09 c/w r thcs 0.15 c/w note 1. pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-264 (ixfk) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixfx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 420 a i sm repetitive, pulse width limited by t jm 1680 a v sd i f = 60a, v gs = 0v, note 1 1.2 v t rr 140 ns q rm 0.38 c i rm 7.00 a i f = 150a, -di/dt = 100a/ s v r = 60v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 100a r g = 1 (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2009 ixys corporation, all rights reserved IXFK420N10T ixfx420n10t fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 4v 6v 5v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 240 280 320 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5 v 6 v 4 v 4.5v fig. 4. normalized r ds(on) vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d < 420a fig. 5. normalized r ds(on) vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ds - volts i d - amperes v gs = 15v 10v 7v 4v 5v 5.5v 6v
ixys reserves the right to change limits, test conditions, and dimensions. IXFK420N10T ixfx420n10t ixys ref:f_420n10t(9v)9-22-09 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 3.0 3.5 4.0 4.5 5.0 5.5 v gs - volts i d - amperes t j = 150oc - 40oc 25oc fig. 8. transconductance 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 100 200 300 400 500 600 700 q g - nanocoulombs v gs - volts v ds = 50v i d = 210a i g = 10ma fig. 11. capacitance 0.1 1.0 10.0 100.0 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - nanofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 10,000 1 10 100 1,000 v ds - volts i d - amperes 25s 100s 1ms 10ms r ds(on) limit t j = 175oc t c = 25oc single pulse 100ms external lead limit dc
? 2009 ixys corporation, all rights reserved IXFK420N10T ixfx420n10t fig. 14. resistive turn-on rise time vs. drain current 0 40 80 120 160 200 240 280 320 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 50v fig. 15. resistive turn-on switching times vs. gate resistance 100 200 300 400 500 600 700 12345678910 r g - ohms t r - nanoseconds 0 40 80 120 160 200 240 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 100a i d = 200a fig. 16. resistive turn-off switching times vs. junction temperature 0 100 200 300 400 500 600 700 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 80 100 120 140 160 180 200 220 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 50v i d = 100a i d = 200a fig. 17. resistive turn-off switching times vs. drain current 0 100 200 300 400 500 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 60 100 140 180 220 260 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 50v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 100 140 180 220 260 300 340 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 50v i d = 200a i d = 100a fig. 18. resistive turn-off switching times vs. gate resistance 100 200 300 400 500 600 700 800 12345678910 r g - ohms t f - nanoseconds 100 200 300 400 500 600 700 800 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 200a i d = 100a
ixys reserves the right to change limits, test conditions, and dimensions. IXFK420N10T ixfx420n10t ixys ref:f_420n10t(9v)9-22-09 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 19. maximium transient thermal impedance .sadgsfgsf 0.200
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